超级军网记录又刷新了-富士通推出超高波段频率的GaN晶体管
来源：百度文库 编辑：超级军网 时间：2024/04/25 21:23:15
这个是基于HEMTs的，比东芝的还要NB些，不得不承认，这次还得膜拜一下。。。。
Fujitsu Laboratories Develops Highest Output Power Gallium-Nitride HEMT Power Amplifier
CompoundSemi News Staff
October 22, 2008...Fujitsu Laboratories Ltd. (Fujitsu) of Kawasaki, Japan, announced the development of a new high-efficiency, high-output amplifier based on gallium-nitride (GaN) high electron mobility transistors (HEMTs). The company boasts that it produces over 300 watts (300W) of power in the C band, with 60% efficiency of power conversion. Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
The company says it expects the PA will extend radar detection range by 2.4 times. Fujitsu anticipates that replacing the traveling-wave tube amplifiers commonly used for high output power applications with this new technology will enable smaller, lighter, more energy-efficient, and longer-lasting transmission systems for applications including satellite communications, next-generation mobile phone base stations and radar. According to the company, the large and heavy vacuum tube-based traveling wave tube amplifiers cannot be effectively replaced by GaAs transistors because they a much lower breakdown voltage这个是基于HEMTs的，比东芝的还要NB些，不得不承认，这次还得膜拜一下。。。。
Fujitsu Laboratories Develops Highest Output Power Gallium-Nitride HEMT Power Amplifier
CompoundSemi News Staff
October 22, 2008...Fujitsu Laboratories Ltd. (Fujitsu) of Kawasaki, Japan, announced the development of a new high-efficiency, high-output amplifier based on gallium-nitride (GaN) high electron mobility transistors (HEMTs). The company boasts that it produces over 300 watts (300W) of power in the C band, with 60% efficiency of power conversion. Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
The company says it expects the PA will extend radar detection range by 2.4 times. Fujitsu anticipates that replacing the traveling-wave tube amplifiers commonly used for high output power applications with this new technology will enable smaller, lighter, more energy-efficient, and longer-lasting transmission systems for applications including satellite communications, next-generation mobile phone base stations and radar. According to the company, the large and heavy vacuum tube-based traveling wave tube amplifiers cannot be effectively replaced by GaAs transistors because they a much lower breakdown voltage
Fujitsu Laboratories Develops Highest Output Power Gallium-Nitride HEMT Power Amplifier
CompoundSemi News Staff
October 22, 2008...Fujitsu Laboratories Ltd. (Fujitsu) of Kawasaki, Japan, announced the development of a new high-efficiency, high-output amplifier based on gallium-nitride (GaN) high electron mobility transistors (HEMTs). The company boasts that it produces over 300 watts (300W) of power in the C band, with 60% efficiency of power conversion. Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
The company says it expects the PA will extend radar detection range by 2.4 times. Fujitsu anticipates that replacing the traveling-wave tube amplifiers commonly used for high output power applications with this new technology will enable smaller, lighter, more energy-efficient, and longer-lasting transmission systems for applications including satellite communications, next-generation mobile phone base stations and radar. According to the company, the large and heavy vacuum tube-based traveling wave tube amplifiers cannot be effectively replaced by GaAs transistors because they a much lower breakdown voltage这个是基于HEMTs的，比东芝的还要NB些，不得不承认，这次还得膜拜一下。。。。
Fujitsu Laboratories Develops Highest Output Power Gallium-Nitride HEMT Power Amplifier
CompoundSemi News Staff
October 22, 2008...Fujitsu Laboratories Ltd. (Fujitsu) of Kawasaki, Japan, announced the development of a new high-efficiency, high-output amplifier based on gallium-nitride (GaN) high electron mobility transistors (HEMTs). The company boasts that it produces over 300 watts (300W) of power in the C band, with 60% efficiency of power conversion. Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
The company says it expects the PA will extend radar detection range by 2.4 times. Fujitsu anticipates that replacing the traveling-wave tube amplifiers commonly used for high output power applications with this new technology will enable smaller, lighter, more energy-efficient, and longer-lasting transmission systems for applications including satellite communications, next-generation mobile phone base stations and radar. According to the company, the large and heavy vacuum tube-based traveling wave tube amplifiers cannot be effectively replaced by GaAs transistors because they a much lower breakdown voltage
C波段，300W。用来做什么的？
有没有人科普下
这东西用来干嘛的
这东西用来干嘛的
想知道老毛子的电子管功率能做到多大
打酱油的，围观
富士通还开发了世界上第一个用于77GHz的功率放大器PA，实现8.5分贝增益和6.3dbm饱和输出功率。相当NB了。
打酱油的。。。。的路过